Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
نویسندگان
چکیده
Author details V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev 03680, Ukraine. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR 72701, USA. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland.
منابع مشابه
Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. ...
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Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm for undoped, Si-, and Mg-doped samples. These peaks are related to CH, CH2, and CH3 defect complexes, respectivel...
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عنوان ژورنال:
دوره 12 شماره
صفحات -
تاریخ انتشار 2017